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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1517 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) *Good Linearity of hFE *High Speed Switching APPLICATIONS *Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE UNIT 130 V 80 V 7 V 2 A 5 A 25 W .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain--Bandwidth Product CONDITIONS IC= 10mA; IB= 0 IC= 2A; IB= 0.1A B 2SD1517 MIN 80 TYP. MAX UNIT V 0.5 1.5 10 50 45 V V A A IC= 2A; IB= 0.1A B VCB= 100V; IE= 0 VEB= 5V; IC= 0 IC= 0.1A; VCE= 2V IC= 0.5A; VCE= 2V Switching times ton tstg tf Turn-on Time Storage Time Fall Time w w P scs .i w IC= 0.5A; VCE= 10V; f= 10MHz .cn mi e 60 260 25 MHz 0.1 2.5 0.3 s s s IC= 0.5A; IB1= -IB2= 50mA; VCC= 50V hFE-2 classifications R 60-120 Q 90-180 130-260 isc Websitewww.iscsemi.cn 2 |
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